Nano-electronics motivates scientists around the world to build smaller and dynamic devices. However, it will be challenging as doping is done at the nano-scale. Making it dopant free is one of the solutions, where charges are trapped in substrate region. Thus, making an n-type or p-type Field Effect Transistor (FET) electrically selectable or electrically reconfigurable. In this thesis, simulations are implemented for one of the optimized FET designs among other existing ones, where a double gate structure with dual metal gate is used. Double gate structure is a long channel FET, which is superior at insignificant voltages. The advantage of having a single metal and double metal are discussed in this thesis. It is also a cost effective process in fabrication as a complex doping process can be avoided at the source and drain, which degrades device performance. This methodology is free of issues like Statistic dopant fluctuation and complicated LDD (lightly doped drain) constructions in an emerging advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure. The characteristics of this design are simulated and verified using Silvaco Technology Computer Aided Design (TCAD).
June 30, 2015
The right to download or print any of the pages of this thesis (Material) is granted by the copyright owner only for personal or classroom use. The author retains all proprietary rights, including copyright ownership. Any reproduction or editing or other use of this Material by any means requires the express written permission of the copyright owner. Except as provided above, or any use beyond what is allowed by fair use (Title 17 Section 107 U.S.C.), you may not reproduce, republish, post, transmit or distribute any Material from this web site in any physical or digital form without the permission of the copyright owner of the Material. Inquiries regarding any further use of these materials should be addressed to Administration, Jernigan Library, Texas A&M University-Kingsville, 700 University Blvd. Kingsville, Texas 78363-8202, (361)593-3416.