Nano-electronics motivates scientists around the world to build smaller and dynamic devices. However, it will be challenging as doping is done at the nano-scale. Making it dopant free is one of the solutions, where charges are trapped in substrate region. Thus, making an n-type or p-type Field Effect Transistor (FET) electrically selectable or electrically reconfigurable. In this thesis, simulations are implemented for one of the optimized FET designs among other existing ones, where a double gate structure with dual metal gate is used. Double gate structure is a long channel FET, which is superior at insignificant voltages. The advantage of having a single metal and double metal are discussed in this thesis. It is also a cost effective process in fabrication as a complex doping process can be avoided at the source and drain, which degrades device performance. This methodology is free of issues like Statistic dopant fluctuation and complicated LDD (lightly doped drain) constructions in an emerging advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure. The characteristics of this design are simulated and verified using Silvaco Technology Computer Aided Design (TCAD).
Language
eng
File Type
pdf
File Size
2252072 Bytes
Date Available
June 30, 2015
LC Number
T378.24 P753d
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