Silicon Carbide (SiC) is a very popular industrial wide bandgap semiconductor because of its potential for high-power, high-temperature, high-power microwave devices, light emitters, microelectromechanical system (MEMS) technology, and nanoelectromechanical system (NEMS) technology . Because of its wide bandgap, high-electric field strength and high-thermal conductivity, many different types of electronic devices have been successfully characterized and fabricated using SiC. The main research objectives of this thesis are (1) to model single-gate and tri-gate SiC nanowire Field Effect Transistors (SiCNW FET), (2) to simulate the device performance for both single-gate and tri-gate SiCNW FETs, and (3) to characterize the electrical properties for both of the types and to show the performance differences between different polytypes of SiC. The purpose of this thesis is to compare 3C-SiC, 6H-SiC and 4H-SiC Nanowire Field Effect Transistors (NWFET). An electrode or gate situated above the nanowire controls the flow of electricity through devices.
June 30, 2015
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